050-7414 rev d 2-2004 APT13GP120BDF1 a new generation of high voltage power igbts. using punch-through technology and a proprietary metal gate, this igbt has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. in many cases, the power mos 7 ? igbt provides a lower cost alternative to a power mosfet. ? low conduction loss ? 100 khz operation @ 600v, 10a ? low gate charge ? 50 khz operation @ 600v, 16a ? ultrafast tail current shutoff ? rbsoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 1200 3 4.5 6 3.3 3.9 3.0 500 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 500a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l APT13GP120BDF1 1200 20 30 41 20 50 50a @ 960v 250 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c reverse bias safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt to-247 g c e g c e APT13GP120BDF1 1200v
050-7414 rev d 2-2004 APT13GP120BDF1 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 13a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 600v v ge = 15v i c = 13a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 13a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 1145 90 15 7.5 55 8 26 50 9 12 28 34 114 330 165 9 12 70 200 223 710 840 unit pf v nc a ns j ns j unit c/w gm min typ max .50 1.18 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7414 rev d 2-2004 APT13GP120BDF1 typical performance curves t j = 25c. 250s pulse test <0.5 % duty cycle t c = 125c t c = 25c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c 250s pulse test <0.5 % duty cycle v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction trmperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 012345 6 0123456 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 6 8 10 12 14 16 -55 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 40 35 30 25 20 15 10 5 0 16 14 12 10 8 6 4 2 0 5 4 3 2 1 0 60 50 40 30 20 10 0 40 35 30 25 20 15 10 5 0 40 35 30 25 20 15 10 5 0 6 5 4 3 2 1 0 1.10 1.05 1.00 0.95 0.90 i c = 13a t j = 25c t c = 25c t c = -55c t c = 125c t c = -55c v ce = 960v v ce = 240v v ce = 600v i c = 6.5a i c = 13a i c = 26a i c = 6.5a i c = 13a i c = 26a
050-7414 rev d 2-2004 APT13GP120BDF1 t j = 125c, v ge = 10v or 15v v ge =15v,t j =125c v ge =15v,t j =25c t j = 25c, v ge = 10v or 15v t j = 125c, v ge = 10v or 15v e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a t j = 125c,v ge = 15v t j = 25c, v ge = 10v or 15v t j = 25c,v ge = 15v t j = 25 or 125c,v ge = 15v v ce = 600v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 0 10 20 30 40 50 25 50 75 100 125 v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v t j = 125c v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 600v r g = 5 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c , t j =125c r g = 5 ? l = 100 h 14 12 10 8 6 4 2 0 30 25 20 15 10 5 0 1400 1200 1000 800 600 400 200 0 1800 1600 1400 1200 1000 800 600 400 200 0 120 100 80 60 40 20 0 300 250 200 150 100 50 0 1600 1400 1200 1000 800 600 400 200 0 1600 1400 1200 1000 800 600 400 200 0 v ge = 15v
050-7414 rev d 2-2004 APT13GP120BDF1 510 15202530 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area i c , collector current (a) figure 20, operating frequency vs collector current c res c ies c oes typical performance curves t j = 125 c t c = 75 c d = 50 % v ce = 600v r g = 5 ? 3,000 1,000 500 100 10 1 0 10 20 30 40 50 0 200 400 600 800 1000 181 100 50 10 0.216 0.284 0.600f 0.161f power (watts) junction temp. ( ?c) case temperature rc model 0.60 0.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 figure 19b, transient thermal impedance model max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? =
050-7414 rev d 2-2004 APT13GP120BDF1 figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt15df120 v ce figure 21, inductive switching test circuit v cc 90% 90% t d(off) 0 10% t f t j = 125c drainvoltage drain current gate voltage switching energy 90% 10% t r 5% 5% t j = 125c drain current drainvoltage gate voltage 10% t d(on) switching energy
050-7414 rev d 2-2004 APT13GP120BDF1 characteristic / test conditions maximum average forward current (t c = 90c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 13a forward voltage i f = 26a i f = 13a, t j = 125c static electrical characteristics unit amps unit volts min typ max 3.1 3.7 2.3 APT13GP120BDF1 15 22 110 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. min typ max - 36 - 280 - 270 -3- - 390 - 1000 -6- - 150 - 1500 -20 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.20 1.00 0.80 0.60 0.40 0.20 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 0.676 c/w 0.504 c/w 0.00147 j/ c 0.0440 j/ c power (watts) rc model junction temp ( c) case temperature ( c) figure 25b, transient thermal impedance model apt reserves the right to change, without notice, the specifications and information contained herein. ultrafast soft recovery anti-parallel diode
050-7414 rev d 2-2004 APT13GP120BDF1 t j = 125 c v r = 800v 7.5a 15a 30a t rr q rr q rr t rr i rrm q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55 c t j = 25 c t j = 125 c t j = 150 c duty cycle = 0.5 t j = 150 c t j = 125 c v r = 800v t j = 125 c v r = 800v 25 20 15 10 5 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) 0 1 2 3 4 5 6 7 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 30a 15a 7.5a 500 400 300 200 100 0 25 20 15 10 5 0 0 25 50 75 100 125 150 25 50 75 100 125 150 .8 1 10 100 200 100 90 80 70 60 50 40 30 20 10 0 2500 2000 1500 1000 500 0 15a 7.5a 30a 1.2 1.0 0.8 0.6 0.4 0.2 0.0 140 120 100 80 60 40 20 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage
050-7414 rev d 2-2004 APT13GP120BDF1 t0-247 package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector (cathode) emitter (anode) gate collector (cathode) 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform
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